학술논문
Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(9):1306-1308 Sep, 2012
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction scheme using both the real and imaginary parts of drain port admittance parameters. Appropriate thermal network is investigated, and a large amount of temperature rise due to self-heating is confirmed for short channel silicon-on-insulator MOSFETs with ultrathin body and buried oxide.