부산대학교 도서관

This paper presents simulation study of 32 nm carbon nanotube field effect transistor (CNFET) and complementary metal oxide semiconductor (CMOS) based negative gain digitally programmable second generation current conveyor (DPCCIIK - ). A thorough analysis of negative gain CNFET (CN-DPCCIIK - ) and CMOS based DPCCIIK - (CMOS-DPCCIIK - ) for various specifications characteristics like voltage and current bandwidth, negative current gain, voltage gain, average power, and terminal X and Y resistances has been done. Thus, from obtained results it has been observed that the bandwidth of CN-DPCCIIK - has been increased considerably by 10 3 fold. Average power dissipated by CN-DPCCIIK - is 77 % lower than CMOS-DPCCIIK - . Other performance measuring parameters like terminal X of CN-DPCCIIK - is 99% lower than its CMOs counterpart. Terminal Y resistance of CN-DPCCIIK - is 362 times more than CMOS-DPCCIIK - . It has been observed that CN-DPCCIIK - satisfies the desired characteristics a DPCCIIK - with minimized area. Entire simulation has been done at ±0.7V using HSPICE at 32 nm technology node.