부산대학교 도서관

Germanium (Ge) based devices are widely used in optical communications and image sensors due to the brilliant properties of Ge (high carrier mobility, excellent CMOS compatibility). Here, by integrating Ge with the nanofilms of macroscopic-assembled-graphene (nMAG) - large-scale highly crystalline graphene nanofilm, we demonstrated a high-performance Schottky diode. The device shows a detection bandwidth of 1.5 to 4 $\mu{\mathrm{m}}$ with responsivities ranging from 1.1 A/W to 40 mA/W and specific detectivity between 10 11 to 10 9 Jones, and a rising time of ~80 ns at room temperature. Such performance is a result of the broadband and strong absorption, the long carrier relaxation time (20 ps) of nMAG, and the low Schottky barrier of $n$MAG/Ge junction. The broadband detection range of this detector is comparable to the state-of-the-art Ge-based IR photodiodes.