학술논문

A 12nm FinFET-based High-Efficiency 2.4GHz 16dBm Power Amplifier with Digitally Controlled Harmonic Suppression
Document Type
Conference
Source
2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Wireless and Microwave Circuits and Systems (WMCS), 2023 IEEE Texas Symposium on. :1-4 Apr, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Wireless communication
Harmonics suppression
Power amplifiers
Harmonic analysis
FinFETs
CMOS process
Transformers
High-efficiency power amplifier
Bluetooth Low Energy Transceiver
12nm FinFET CMOS
harmonic suppression
Language
Abstract
A highly-efficient (32%) power amplifier (PA) with 16.5dBm output power and digitally controlled harmonic suppression is designed in a 12 nm FinFET CMOS process. The PA operates from a supply voltage of 1.6 V, consumes 124 mW, and has a total die area is 0.27 mm 2 .