학술논문
High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon
Document Type
Conference
Author
Source
OFC 2014 Optical Fiber Communications Conference and Exhibition (OFC), 2014. :1-3 Mar, 2014
Subject
Language
Abstract
We demonstrate 1.3 µm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).