학술논문
Group IV compounds for integrated photonic applications
Document Type
Conference
Author
Source
2016 IEEE 13th International Conference on Group IV Photonics (GFP) Group IV Photonics (GFP), 2016 IEEE 13th International Conference on. :174-175 Aug, 2016
Subject
Language
Abstract
We report methods of engineering the bandgap of SiGe and Ge compounds for the fabrication of electro absorption modulators and light emitting devices. We demonstrate uniform composition, single crystal, defect free SiGe-on-insulator formation. The composition can be tuned in different positions of the chip by modifying the structural design. We also demonstrate Ge disks with strain values of 1.1 and 0.6%.