부산대학교 도서관

Recently, gallium oxide (Ga$_2$O$_3$) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga$_2$O$_3$ trench MOS Schottky barrier diodes (SBDs) appear to be promising candidates, temperature-dependent measurements previously revealed inhomogeneous junctions. In this letter, a vertical $\beta$-Ga$_2$O$_3$ trench MOS SBD is presented. The diode exhibits a homogeneous Schottky junction and nearly ideal thermionic current flow. This indicates better junction properties than previously observed for trench as well as non-trench Ga$_2$O$_3$ SBDs, with only a slight influence of interface states at high temperatures. As a next step toward application, the chip is successfully bonded in an industry-standard TO-247 package. The molded discrete is operational at low temperatures of −50 °C and up to high temperatures of 150 °C while exhibiting a lower increase in on-resistance with rising temperature than SiC Schottky diodes.