학술논문
A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process
Document Type
Conference
Source
2009 European Microwave Conference (EuMC) Microwave Conference, 2009. EuMC 2009. European. :393-396 Sep, 2009
Subject
Language
Abstract
A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a compact chip size of 0.351 mm 2 . The 1-dB gain bandwidth is 54.5 to 61.0 GHz and the minimum noise figure is 6.3 dB at 64 GHz. This MMIC successfully demonstrates the forward-body-biased LNA in millimeter-wave frequency region with the lowest supply-voltage among the published LNAs around 60 GHz.