부산대학교 도서관

In 0.53 Ga 0.47 As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., I on /I off ∼10 5 , DIBL=48 mV/V, g m =1510 µS/µm, and I on =301 µA/µm at V ds =0.5V with L g =120 nm device). The extrinsic field effect mobility of 1731 cm 2 /V-s with EOT∼0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and I on when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an I on of 44.1 µA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In 0.53 Ga 0.47 As FinFETs to the best of our knowledge.