부산대학교 도서관

This paper presents a millimeter-wave (mmW) wideband low noise amplifier (LNA) fabricated in $0.15-\mu \mathrm{m}$ GaAs pHEMT process. The $LC \pi$-type input matching network and gain-distributed technique are utilized to achieve the wideband low noise and high-gain performance. The proposed $L N A$ achieves a 3-dB bandwidth $(BW)$ of 25-43 GHz, with a small-signal peak gain of 24.8 dB. The lowest noise figure $(NF)$ is 2.1 dB, and the average $NF$ is 2.7 dB. The dc power consumption is only 79 mW under 2-V supplied voltage. This LNA demonstrates wide bandwidth, low noise, and high gain under a low dc power consumption.