학술논문
Packaging Innovations for High Voltage (HV) GaN Technology
Document Type
Conference
Author
Source
2017 IEEE 67th Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2017 IEEE 67th. :1480-1484 May, 2017
Subject
Language
ISSN
2377-5726
Abstract
Texas Instruments Inc. (TI) has recently announced the introduction of the semiconductor industry's first high voltage (600V), driver-integrated product built around Gallium Nitride (GaN) technology. Integrating the GaN FET with the driver in a single Quad Flat No-Lead (QFN) package required overcoming a number of challenges. The integrated GaN technology enables greater energy efficiency, increased power density and reduced power loss over silicon, thus enabling industrial, enterprise-computing, telecom and renewable-energy systems to operate significantly faster and more efficiently. This paper will discuss the novel packaging solutions implemented for obtaining excellent performance and manufacturability of the product: chip-package co-design, FET-package interaction, and material selection.