학술논문
A D-Band Swing Boosting Power Detector With 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz⁰.⁵ NEP in 22-nm CMOS FDSOI
Document Type
Periodical
Source
IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 34(5):497-500 May, 2024
Subject
Language
ISSN
2771-957X
2771-9588
2771-9588
Abstract
A ${D}$ -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz0.5, respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the ${D}$ -band.