학술논문
Study of TID effects on one row hammering using gamma in DDR4 SDRAMs
Document Type
Conference
Source
2018 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2018 IEEE International. :P-SE.2-1-P-SE.2-5 Mar, 2018
Subject
Language
ISSN
1938-1891
Abstract
This paper investigates the Total Ionizing Dose (TID) effect on DDR4 SDRAM, using 60 Co γ-rays. Although retention time degraded with 830 Gy(Si) exposure, no retention errors were observed at the retention time of 64-ms and temperature of 80 °C. Unlike retention time degradation, the significant degradation in one-row hammering threshold was observed. The threshold was reduced by up to 113 k with tRP 53.75 ns—67% reduction from pre-irradiation values.