부산대학교 도서관

This work studies the status of the nuclear models used for estimating single event upsets sensitivity and other radiation effects, induced by protons in microelectronic devices. An extended comparison is made between the calculations of the two most developed models, the Intra-Nuclear Cascade model (used for instant by the HETC code) and the Pre-Equilibrium-Exciton (PEqEx) model. The new data base ENDF/B-VI (calculated using PEqEx) is used to clarify the role, of the various interactions of primary protons with Si nuclei, in the energy deposition in silicon. In particular we consider the light nuclear reaction products: secondary protons and /spl alpha/-particles. A comparison of simulated deposition spectra of surface barrier detectors with experimental data is shown. The role of reaction products created in the surrounding of the sensitive volume is discussed.