학술논문
Under-Bump Metallization Contact Resistance ( $R_{c}$ ) Characterization at 10- $\mu \text{m}$ Polymer Passivation Opening
Document Type
Periodical
Author
Source
IEEE Transactions on Components, Packaging and Manufacturing Technology IEEE Trans. Compon., Packag. Manufact. Technol. Components, Packaging and Manufacturing Technology, IEEE Transactions on. 7(10):1592-1597 Oct, 2017
Subject
Language
ISSN
2156-3950
2156-3985
2156-3985
Abstract
Under-bump metallization R c is a critical metric for high-density interconnect in electronic devices. We developed a test vehicle to characterize the impact of unit processes on R c for 10- $\mu \text{m}$ polymer passivation opening. We demonstrate that advanced preclean is necessary to achieve low (R c < 20 $\text{m}\Omega$ ) for future node extendibility, owing to reduction of both Al oxide and organometallic formation. This is achievable through a combination of low-temperature (