학술논문

Investigating the Sintering Process and Mechanical Properties of Nano-copper Particles Coupling Particle Packing Modeling with Molecular Dynamics Simulation
Document Type
Conference
Source
2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024 25th International Conference on. :1-7 Apr, 2024
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Photonics and Electrooptics
Power, Energy and Industry Applications
Micromechanical devices
Temperature
Photonic band gap
Stacking
Sintering
Packaging
Neck
Nano-copper sintering
molecular dynamics simulation
particle packing model
tensile simulation
Language
ISSN
2833-8596
Abstract
The nano-copper particles are widely used in the sintering processes of packaging wide bandgap semiconductors. Despite the significant success in the industry, the mechanism bridging the sintering process to the mechanical properties of sintered nano-copper is not yet well-modeled. In this paper, the impacts of different sintering temperatures and initial porosities caused by different stacking patterns on the uniaxial tensile performance of the sintered layer were studied via a molecular dynamics approach. Two stacking patterns, simple cubic and face-centered cubic, were simulated, respectively. Evolution of their structure at temperatures of 300, 400, 500, and 600 K were simulated as the sintering process. Afterward, the sintered structures were subjected to uniaxial tensile with rates of 0.01 and 0.04 Å/ps at different temperatures to compare the mechanical properties. The results show that the sintering rate and density of the sintered structure increase with a higher temperature. However, the tensile strength of the sintered structure is less relevant to the difference in stacking pattern. This study proves that porosity has a greater effect on sintering quality.