학술논문
Fast Response PDMS/GaN Optical Vacuum Microsensors
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(2):301-304 Feb, 2023
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
In this letter, we demonstrate a PDMS/GaN-based optical microsensor for measuring vacuum pressure. The submillimeter-sized GaN device responsible for optical emission and detection is fabricated through the wafer-scale process. The integration of low-cost porous PDMS film can provide significant reflection changes under atmospheric pressure and vacuum conditions, enabling the GaN device to sense pressure variations in 22–760 Torr. The attractive features of the sensor such as compactness, ease of operation, fast response of 1.0 s, small hysteresis of 1.3 %, and high stability make it suitable for wide applications of vacuum pressure sensing.