학술논문

Optomechanical Switches and Logic Gate Functions Based on GaN-on-Sapphire Devices Integrated With PDMS Membranes
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(7):1192-1195 Jul, 2023
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Logic gates
Photoconductivity
Light emitting diodes
Optical switches
Force
Current measurement
Gallium nitride
force sensor
optomechanical switch
logic gate function
Language
ISSN
0741-3106
1558-0563
Abstract
In this letter, the millimeter-sized optomechanical switches are fabricated based on GaN-on-sapphire devices integrated with PDMS membranes. The mechanically deformable PDMS membrane can effectively introduce optical changes at the sapphire boundary of the GaN device during force loading. The devices with oil-filled and air cavities can exhibit increasing and decreasing photocurrent trends in response to the applied force, respectively, making them function as normally-on and normally-off switches. By pairing the switches in series/parallel connections, the logic gate functions of AND, OR, NAND, and NOR are demonstrated, paving the way for the potential development of force-gated logic circuits.