부산대학교 도서관

Cobalt60, 60 MeV proton and heavy ion tests have been performed on InGaAs and amorphous silicon microbolometer arrays with CMOS readout circuits. The readout circuits showed latch-up at threshold LETs ${\sim} 14$ MeV/mg/cm $^{2}$, but the total dose and displacement damage effects were negligible for low earth orbit conditions. Effects in a microbolometer array tested, for use in Mercury orbit, to 100 krd(Si) and 3.2 $10^{11}$ 60 MeV p/cm$^{2}$ showed acceptable performance, though there was a significant increase in power consumption for the CMOS readout circuit when biased during cobalt60 irradiation.