학술논문
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
Document Type
Conference
Author
Source
2016 IEEE Symposium on VLSI Technology VLSI Technology, 2016 IEEE Symposium on. :1-2 Jun, 2016
Subject
Language
ISSN
2158-9682
Abstract
High-Ge-content (HGC) SiGe FinFETs in a “replacement High-K and metal-gate” (RMG) process flow and with aggressive EOT scaling are demonstrated, for the first time. HGC SiGe pMOS FinFETs with high-mobility, record-low RMG long-channel SS=66mV/dec and great short-channel characteristics down to L G =21nm have been demonstrated. Gate stack and transport properties down to sub-4nm fin widths (W FIN ) have been also studied for the first time. We demonstrate excellent RMG mobility and reliability at aggressive EOT∼7Å, and excellent μ eff =220cm 2 /Vs at N inv =10 13 for fins with W FIN ∼4nm, outperforming state-of-the-art devices at such dimensions and providing very promising results for FinFET scaling for future high-performance FinFET generations.