학술논문
Growth of CuInSe2 nanowires without external catalyst by molecular beam epitaxy
Document Type
Conference
Author
Source
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :2803-2806 Jun, 2016
Subject
Language
Abstract
We report the growth of CuInSe 2 nanowires (NWs) using an evaporation process. The NWs grow on top of an underlying CuInSe 2 polycrystalline layer that initially forms on Si(100) substrates with native SiO 2 . Reference samples grown after removal of the native oxide do not exhibit the formation of NWs. The polycrystalline base layer has a tetragonal chalcopyrite structure and is optically active as confirmed by x-ray diffraction and photoluminescence, respectively. Transmission electron microscopy confirms the composition and atomic structure of the CuInSe 2 NWs. Samples with NWs exhibit a reduced reflectance compared with reference samples, making them interesting for photovoltaic applications.