학술논문

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
Document Type
Conference
Source
2011 IEEE International Solid-State Circuits Conference Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International. :58-60 Feb, 2011
Subject
Components, Circuits, Devices and Systems
Driver circuits
CMOS integrated circuits
Radio frequency
Transistors
Inverters
CMOS technology
Power amplifiers
Language
ISSN
0193-6530
2376-8606
Abstract
State-of-the-art wireless communication radios are implemented in deep-submi-cron CMOS, including the RF power amplifiers (PAs). However, in wireless infrastructure systems, the RF PA is often realized in an LDMOS or a compound technology to obtain the required large output powers. For next-generation reconfigurable infrastructure systems, the switch-mode PAs (SMPA) seem to offer the required flexibility for multiband multimode transmitters. In order to interface the high-power devices of the SMPA with the digital CMOS blocks of the transmitter, a wideband RF CMOS driver capable to generate high voltage (HV) swings is required. In this way, digital signal processing can be directly applied to control the required input pulse shapes of the SMPA.