학술논문

Highly Reliable and Secure PUF Using Resistive Memory Integrated Into a 28 nm CMOS Process
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(5):2291-2296 May, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Physical unclonable function
Voltage
Resistors
Programming
Nonvolatile memory
Transistors
Switches
Hardware security
physical unclonable functions (PUFs)
resistive random access memory (ReRAM)
Language
ISSN
0018-9383
1557-9646
Abstract
Owing to the increased demand for secure communication channels and authentication steps, physical unclonable functions (PUFs) are increasingly important for hardware security. In this article, we report a novel PUF architecture and generation scheme that utilizes the inherent program-time variation of resistive random access memory (ReRAM) cells as an entropy source. ReRAM cells are integrated into a standard 28 nm CMOS manufacturing process, and also show robust non-volatile memory operation. We generated a PUF data set larger than $10^{{8}}$ bits and verified its randomness using a standard NIST test suite. Further verifications such as inter- and intra-hamming distance, 150 °C data retention of PUF bits, and spatial co-relation tests confirm the high reliability of the generated PUF keys.