부산대학교 도서관

A 300-mm GaN-on-Si(111) high- $k$ gate dielectric E-mode GaN MOSHEMT technology is demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT of $L_{\mathrm {G}}$ = 90 nm, $L_{\mathrm {GS}}$ = $L_{\mathrm {GD}}$ = 80 nm, is enabled by 300-mm process capabilities in deep U (DUV) lithography, MOCVD, atomic layer etch (ALE), atomic layer deposition (ALD), and Cu interconnect. The GaN MOSHEMT shows excellent ON/OFF characteristics, low leakages, low $R_{\mathrm {on}}$ , high $I_{\mathrm {D}}$ , and $f_{T}/f_{\mathrm {MAX}}$ of 140/280 GHz. A 42-GHz mm-Wave power amplifier (PA) fabricated in this process for the first time demonstrates a saturated power of 25.6 dBm, a linear gain of 22.5 dB, and a PAE of 35.7%. In this technology, high $f_{T}/f_{\mathrm {MAX}}$ is obtained by scaling to thin equivalent oxide thickness (EOT) and short $L_{\mathrm {G}}$ , and high breakdown is achieved with extended $L_{\mathrm {GD}}$ and field plating. Si CMOS can be integrated with this GaN technology using 3-D layer transfer and does not alter the RF performance of the GaN MOSHEMT. Record $f_{\mathrm {MAX}}$ = 700 GHz ( $f_{T}$ = 115 GHz) is obtained with an $L_{\mathrm {G}}$ = 50 nm GaN MOSHEMT with submicrometer source field plate (FP) fabricated using this 300-mm GaN MOSHEMT process with integrated Si CMOS. Finally, progress on process design kit (PDK) development for this technology is reported.