학술논문
Analyze of temporal and random variability of a 45nm SOI SRAM cell
Document Type
Conference
Author
Source
2009 IEEE International SOI Conference SOI Conference, 2009 IEEE International. :1-2 Oct, 2009
Subject
Language
ISSN
1078-621X
Abstract
This paper presents the analysis of a 45nm SOI SRAM cell variability including history effects and random variability. This leads to an accurate margin calculation.