학술논문
New devices using ferroelectric thin films
Document Type
Conference
Author
Source
International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International. :251-254 1989
Subject
Language
ISSN
0163-1918
Abstract
Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices, and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magnetooptic thin-film devices. Some properties of PZT thin films and of devices based on those properties are described.ETX