학술논문
Data regeneration and disturb immunity of T-RAM cells
Document Type
Conference
Author
Source
2014 44th European Solid State Device Research Conference (ESSDERC) Solid State Device Research Conference (ESSDERC), 2014 44th European. :46-49 Sep, 2014
Subject
Language
ISSN
1930-8876
2378-6558
2378-6558
Abstract
This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting a clear picture of the physical processes taking place in the device. In so doing, the impact of electrical disturbs on unselected cells coming from read operations in the array are comprehensively addressed.