학술논문

Geometry Effects on Switching Currents in Superconducting Ultra Thin Films
Document Type
Conference
Source
2017 16th International Superconductive Electronics Conference (ISEC) Superconductive Electronics Conference (ISEC), 2017 16th International. :1-3 Jun, 2017
Subject
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Power, Energy and Industry Applications
Signal Processing and Analysis
Superconducting photodetectors
Magnetic fields
Superconducting epitaxial layers
Geometry
Photonics
Superconducting thin films
Language
Abstract
Vortex dynamics is strongly connected with the mechanisms responsible for the photon detection of superconducting devices. Indeed, the local suppression of superconductivity by photon absorption may trigger vortex nucleation and motion effects, which can make the superconducting state unstable. In addition, scaling down the thickness of the superconducting films and/or the width of the bridge geometry can strongly influence the transport properties of superconducting films, e.g. affecting its critical current as well as its switching current into the normal state. Understanding such instability can boost the performances of those superconducting devices based on nanowire geometries. We present an experimental study on the resistive switching in NbN and NbTiN ultra-thin films with a thickness of few nanometers. Despite both films were patterned with the same microbridge geometry, the two superconducting materials show different behaviors at very low applied magnetic fields. A comparison with other low temperature superconducting materials outlines the influence of geometry effects on the superconducting transport properties of these materials particularly useful for devices applications.