학술논문
Displacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(11):2396-2404 Nov, 2020
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon–germanium (SiGe) and gallium arsenide (GaAs) heterojunction bipolar transistors (HBTs) as well as bipolar RF ICs (including frequency dividers, voltage-controlled oscillators, and wide-band amplifiers) are highly sensitive to ambient temperature and radiation-induced displacement damage. This article also presents a design approach based on specialized HBT macromodels and hardening techniques.