학술논문
Invited: Polarization engineering in GaN-based normally-off transistors
Document Type
Conference
Author
Source
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) Future of Electron Devices, Kansai (IMFEDK), 2021 IEEE International Meeting for. :1-4 Nov, 2021
Subject
Language
Abstract
Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, while free electrons are populated at access regions after the etching. Self-aligned approach was used for gate stacks preparation.