학술논문
Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALD
Document Type
Conference
Source
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) Advanced Semiconductor Devices & Microsystems (ASDAM), 2016 11th International Conference on. :189-192 Nov, 2016
Subject
Language
Abstract
The sub-threshold slope (SS) of AlGaN/GaN MOSHFETs with HfO 2 gate oxide prepared by Atomic Layer Deposition (ALD) were investigated. The different SS values, like as 290 mV/dec and 100 mV/dec for MOSHFETs with and w/o oxygen-plasma pre-treatment (PHf- and Hf-MOS) respectively, were estimated. The analysis were realized in temperature range from RT to 300°C. From SS, the average Dit, like as 8.4×10 12 eV 1 cm −2 and 1.5×10 12 eV −1 cm −2 for Hf-and PHf-MOS, respectively, were evaluated. The gate leakage current has a strong effect on the SS. The gate leakage were reduced about two orders of magnitude for PHf-MOS (∼10 −8 A/mm at −10V) with oxygen-plasma pre-treatment. The improved SS obviously is also due to the large I ON /I OFF ratio (10 8 ). An increase of SS values with temperature, were found. However, the PHf-MOS have exhibited an approximately half angle of slope of SS with temperature (0,37mV/°C) than Hf-MOS (0,63mV/°C). As a result from SS the D it for PHf-MOS were reduced approximately five times.