부산대학교 도서관

This work depends on the principle of temperature compensation of threshold voltage of MOS transistor. It generates constant voltage 509mV with supply voltage range 0.7V - 1.8V. It is implemented at 180nm in cadence EDA tool. The device has MOS transistor work in the saturation and weak-inversion mode. It can work at 0.7V supply voltage with dc current consumption of $0.6 \mu\mathrm{A}$ at room temperature. The measured temperature coefficient in temperature range 0–130 °C was 118ppm/°C. The measured line Sensitivity was 0.311%/V. The (PSRR) was −35 dB at 100 Hz and −37 dB at 10 MHz respectively.