학술논문
A nano power voltage reference generator using of sub threshold MOSFETs
Document Type
Conference
Author
Source
2017 International Conference on Information, Communication, Instrumentation and Control (ICICIC) Information, Communication, Instrumentation and Control (ICICIC), 2017 International Conference on. :1-5 Aug, 2017
Subject
Language
Abstract
A Nano power CMOS voltage generator circuit has been implemented using a 0.18μm standard CMOS process technology. The circuit has MOSFETs operated in sub threshold region without resistor. It works on the concept of temperature compensation of threshold voltage. It generate 212mV output reference voltage in supply voltage range 0.8–1.8V. The temperature coefficient of voltage was 256ppm/°C in temperature range 0–150°C. The line sensitivity was 15%/V in the operating voltage range 0.8–1.8 V, and power supply rejection ratio (PSRR) was −42dB at 100 Hz and −35dB at 10 MHz.