부산대학교 도서관

Electro-optical modulators (EOMs) are widely used components because they enable fast switching of narrowband light sources by an electrical signal. Recently, EOMs for wavelengths below $\lambda=1000$ nm have attracted great interest for use in integrated photonics with applications such as optogenetics or biophotonics [1], [2]. A Fabry-Perot type EOM allows for very compact implementation on the basis of thin films [3], [4]. This concept enables mass production for hybrid integrated optical circuits. Additionally, it implies orders of magnitude shorter interaction length between light and active medium compared to Mach-Zehnder type EOMs, the latter being based on waveguides from the active material. We explore modulation properties of materials with promising electrooptic (EO) coefficients in the double-digit pm/V range at the short end of near infrared wavelengths, not accessible by silicon photonics [5]. In contrast to the striking advantages of these materials, they exhibit non-zero losses due to intrinsic absorption or scattering, which is why shorter interaction lengths are beneficial.