학술논문

THz detection by multi-layered topological insulator
Document Type
Conference
Source
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016 41st International Conference on. :1-2 Sep, 2016
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Topological insulators
Phase change memory
Detectors
Electrodes
Absorption
Sensitivity
Graphene
Language
ISSN
2162-2035
Abstract
We propose electrical THz detection based on topological insulators which have Dirac electrons. Among them, multi-layered topological insulator system is expected to stack topological interface states and hence enhancement of photo absorption is likely to be realized. GeTe/Sb 2 Te 3 interfacial phase change memory materials (iPCM) were used and THz-induced electrical response was measured. As a result, we found that the irradiation of THz pulse causes decrease in the resistance of the device. It was found that the sensitivity of the device can be enhanced by increase of repetition number of iPCM due to the multiplication of topological states.