학술논문
Exploring Phase and Bandgap Variations in Gallium Oxide Using Mist-based Chemical Vapor Deposition System
Document Type
Conference
Source
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Subject
Language
Abstract
The present research demonstrates a thermally stable Kappa-phase Gallium Oxide (K-Ga 2 O 3 ) using an affordable Mist Chemical Vapor deposition system (MIST-CVD). A systematic growth approach has been used, which shows that the K-Ga 2 O 3 is stable at high temperatures with other polymorphs of the Ga 2 O 3 family on Sapphire Substrate. Further, the structural, morphological, and optical properties of Ga 2 O 3 films have been investigated using XRD, FE-SEM, EDAX, UV-Vis, and Raman measurements.