학술논문
The Schottky barrier detectors based on 4H-SiC epitaxial layer
Document Type
Conference
Author
Source
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) Advanced Semiconductor Devices And Microsystems (ASDAM), 2020 13th International Conference on. :143-146 Oct, 2020
Subject
Language
ISSN
2474-9737
Abstract
In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The typical thickness of the active layer was between 25 ×m and 100 ×m. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by evaporation of Au/Ni double layer. The reverse and forward current-voltage and also capacitance-voltage characteristics were measured at room temperature up to 600 V. The doping concentration profile was calculated. The obtained concentration of doping was below $1 \times 10^{14} cm^{-3}$. The detection properties of 4H-SiC particle detector were tested using two radioisotopes: 241Am and 238Pu.