학술논문
Neutron Detection Using Epitaxial 4H-SiC Detector Structures
Document Type
Conference
Source
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Advanced Semiconductor Devices and Microsystems (ASDAM), 2018 12th International Conference on. :1-4 Oct, 2018
Subject
Language
ISSN
2474-9737
Abstract
In this paper we have focused on detection of neutrons using detector based on 4H-SiC high quality epitaxial layer. The thickness of the active layer was 70 μm and 105 μm. The diameter of Ni/Au circular Schottky contacts were 1.5 mm, and 4.5 mm. The conversion layer was applied on the top detector contact to convert neutron to charge particle. The high density polyethylene and 6LiF were used for detection of fast and thermal neutrons, respectively. The fast 16 MeV neutrons were generated using deuterium-tritium reaction and thermal neutrons were obtained by 239Pu_Be source. The optimal thickness in term of detection efficiency was calculated using MCNPX (Monte Carlo N-particle eXtended) code.