학술논문
Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications
Document Type
Periodical
Author
Source
IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 28(9):4202-4215 Sep, 2013
Subject
Language
ISSN
0885-8993
1941-0107
1941-0107
Abstract
In this paper, a high-current dc–dc power supply in package is reported with an emphasis on the design aspects of the low- and high-side power MOSFETs embedded in the power module. A new NexFET structure with its source electrode on the bottom side of the die (source down) is designed to enable an innovative stacked-die PSiP technology with significantly reduced parasitic inductance and package footprint. A gate voltage pull-down circuitry monolithically integrated in the low-side NexFET is introduced to effectively prevent shoot-through faults even when a very low gate threshold voltage is used to reduce conduction and body diode reverse-recovery-related power losses. In addition, an asymmetric gate resistor circuitry is monolithically integrated in the high-side NexFET to minimize voltage ringing at the switch node. With all these novel device technology improvements, the new power supply in package module delivers a significant improvement in efficiency and offers an excellent solution for future high-frequency, high-current-density dc–dc converters.