학술논문

Structural, Optical and Electrical Characterization of Heterojunction Rib-Si Solar Cells
Document Type
Conference
Source
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :2032-2035 Jun, 2018
Subject
Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Silicon
Ribs
Heterojunctions
Etching
Passivation
Electroluminescence
amorphous SiO
electroluminescence
heterojunction
Rib
ultra-thin Si solar cell
Language
Abstract
Heterojunction Rib-Si solar cells have been developed aiming at very thin Si solar cells. Structural, optical and electrical characterization of Rib-Si solar cells with a thickness of 80-100μm was performed. TEM cross sectional observation revealed that amorphous Si:H is more easily crystallized on the (100) plane than the (111) plane. The EL external quantum efficiency is currently about 0.1% for Rib-Si solar cells with 1 sun Voc of 0.68-0.71V. Furthermore, characteristic mapping of Rib-Si solar cells was attempted and an enhancement of about 10 mV in open circuit voltage could be recognized in thin region.