학술논문
Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors
Document Type
Conference
Author
Source
2007 IEEE International SOI Conference SOI Conference, 2007 IEEE International. :25-26 Oct, 2007
Subject
Language
ISSN
1078-621X
Abstract
We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained Etch Stop Layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of Silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.