학술논문
Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETs using the charge-pumping technique
Document Type
Conference
Author
Source
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on. :431-434 2001
Subject
Language
ISSN
1063-6854
Abstract
The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.