학술논문
Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectification
Document Type
Conference
Author
Source
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on. :145-148 2000
Subject
Language
ISSN
1063-6854
Abstract
An investigation is performed in this paper upon the impact of the parasitic bipolar junction transistor (BJT) with respect to the body-diode characteristics of the power MOSFET. Simulated and experimental results show that the forward conduction and the reverse recovery characteristics of the body-diode can be improved by enhancing the parasitic BJT, formed by the N/sup +/ source (emitter), P-well (base) and N-epi layer (collector) of power MOSFETs, Furthermore, the trade-off between enhancing the parasitic BJT and retaining the device's unclamped inductive switching (UIS) capability is also addressed.