학술논문
The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies
Document Type
Conference
Author
Source
22nd International Reliability Physics Symposium Reliability Physics Symposium, 1984. 22nd Annual. :48-51 Apr, 1984
Subject
Language
ISSN
0735-0791
Abstract
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.