학술논문
Three-dimensional analysis of leakage currents in III-V HBTs
Document Type
Conference
Author
Source
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest. :229-232 2002
Subject
Language
ISSN
1064-7775
Abstract
We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.