학술논문

Dark current reduction in very-large area CCD imagers for professional DSC applications
Document Type
Conference
Source
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :993-996 2004
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Dark current
Charge coupled devices
Charge pumps
Pixel
Clocks
Semiconductor device noise
Implants
Artificial intelligence
Digital cameras
Charge-coupled image sensors
Language
Abstract
CCD imagers for professional digital still camera (DSC) applications require very low dark current levels to obtain excellent image quality at long exposure times. This paper presents the limits of charge pumping for dark current reduction in very-large area full-frame CCD imagers, and proposes a new implementation of "all gates pinning" for integration in multi-pinned phase operation mode. The dark current is reduced from 12 pA/cm/sup 2/ to 0.6 pA/cm/sup 2/ (3 e/sup -//pixel/s) at 35/spl deg/C, and the associated fixed pattern noise is reduced with a factor of 6.