학술논문
Relaxation of upper laser levels in terahertz silicon lasers
Document Type
Conference
Author
Source
2008 5th IEEE International Conference on Group IV Photonics Group IV Photonics, 2008 5th IEEE International Conference on. :27-28 Sep, 2008
Subject
Language
ISSN
1949-2081
1949-209X
1949-209X
Abstract
Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p 0 and 2p ±; states lie in the range of 4–90 ps.