학술논문

Hot pixel annealing behavior in CCDs irradiated at -84/spl deg/C
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 52(6):2672-2677 Dec, 2005
Subject
Nuclear Engineering
Bioengineering
Annealing
Charge coupled devices
Temperature
Dark current
Space missions
Cameras
Telescopes
Charge-coupled image sensors
Detectors
Degradation
CCDs
displacement damage
hot pixels
radiation effects
Language
ISSN
0018-9499
1558-1578
Abstract
A Hubble space telescope wide field camera 3 e2v CCD was irradiated while operating at -84/spl deg/C and the dark current studied as a function of temperature while the charge coupled device was warmed to a sequence of temperatures up to a maximum of +30/spl deg/C. The device was then cooled back down to -84/spl deg/ and remeasured. Hot pixel populations were tracked during the warm up and cool down. Hot pixel annealing began below -40/spl deg/C and the anneal process was largely completed by the time the detector reached +20/spl deg/C. There was no apparent sharp annealing temperature. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless sustained a higher leakage rate than the remaining population. The mechanism for hot pixel annealing is not presently understood. Room temperature irradiations do not adequately characterize the hot pixel distributions for cooled applications.