학술논문
Low Dimensional Transition Metal Dichalchogenides FETs Enabled Photosensitive Inverters for IoT Sensor Applications with High Noise Immunity
Document Type
Conference
Author
Source
2019 Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2019. :13-15 Mar, 2019
Subject
Language
Abstract
Herein, photo sensitive inverters comprised of an enhancement MoS 2 driver with light-shield layers (LSLs) (or GaN FET drivers) and MoS 2 depletion load. As compared with MoS 2 drivers with LSLs, GaN FET drivers have benefits in the respect of less degradation of gains, leading to the better noise margin of light frequency circuits (LFCs). Moreover, systematic studies on design rules for the better performance of LFCs were performed via experimental data execution and their validation, supported by SPICE simulation.