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The ultimate CMOS device and beyond
Document Type
Conference
Author
Kuhn, Kelin J.; Avci, Uygar; Cappellani, Annalisa; Giles, Martin D.; Haverty, Michael; Kim, Seiyon; Kotlyar, Roza; Manipatruni, Sasikanth; Nikonov, Dmitri; Pawashe, Chytra; Radosavljevic, Marko; Rios, Rafael; Shankar, Sadasivan; Vedula, Ravi; Chau, Robert; Young, Ian
Source
2012 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2012 IEEE International. :8.1.1-8.1.4 Dec, 2012
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Materials
Logic gates
CMOS integrated circuits
Metals
Face
Performance evaluation
Manufacturing
Language
ISSN
0163-1918
2156-017X
Abstract
For the past 40 years, relentless focus on Moore's Law transistor scaling has delivered ever-improving CMOS transistor density. This paper discusses architectural and materials options which will contribute to the ultimate CMOS device. In addition, the paper reviews device options beyond the ultimate CMOS device.

Online Access

Full Text (IEEE) Find it@PNU

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